Gate-Field-Induced Schottky Barrier Lowering in a Nanotube Field-Effect Transistor
نویسندگان
چکیده
We propose that in nanotube field effect transistors (FETs) with small effective dielectric thickness the vertical potential drop across the nanotube diameter at finite gate bias can lower or eliminate the Schottky barrier at the electrode. This effect is demonstrated in single-walled carbon nanotube FETs fabricated on top of ultra-high-κ dielectric constant SrTiO3/Si substrates. These FETs show transconductances normalized by channel width of 8900 S/m, one of the highest values to date. This transconductance cannot be explained within the conventional FET or Schottky-barrier models.
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